SiRA12DDP Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - High power density DC/DC - Synchronous rectification - VRMs and embedded DC/DC S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAK SO-8 Si RA12DDP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM IS IAS EAS TJ, Tstg LIMIT 30 +20, -16 81 65 29 b, c 24 b, c 150 34 4.6 b, c 16 13 38 24 5 b, c 3.2 b, c -55 to +150...