SiRA58DP - N-Channel 40V MOSFET

Datasheet Summary

Features

TrenchFET® Gen IV power MOSFET.
100 % Rg and UIS tested.
Qgd / Qgs ratio < 1 optimizes switching characteristics.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

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Datasheet Details

Part number	SiRA58DP
Manufacturer	Vishay
File Size	376.88 KB
Description	N-Channel 40V MOSFET
Datasheet	SiRA58DP Datasheet
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Full PDF Text Transcription

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www.vishay.com SiRA58DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 40 0.00265 0.00360 23 109 Single FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.

Published: Nov 30, 2016 |