SiRA54DP - N-Channel MOSFET

Features

TrenchFET® Gen IV power MOSFET.
100 % Rg and UIS tested.
Tuned for the lowest RDS-Qoss FOM.
Qgd / Qgs ratio < 1 optimizes switching characteristics.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiRA54DP
Manufacturer	Vishay
File Size	401.59 KB
Description	N-Channel MOSFET
Datasheet	SiRA54DP Datasheet
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Full PDF Text Transcription

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www.vishay.com SiRA54DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00235 at VGS = 10 V 0.00320 at VGS = 4.5 V ID (A) a, g 60 60 Qg (TYP.) 32 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information:  SiRA54DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Tuned for the lowest RDS-Qoss FOM • Qgd / Qgs ratio < 1 optimizes switching characteristics • Material categorization: for definitions of compliance please see www.vishay.

Published: Nov 27, 2019 |