SiRA58DP Datasheet | Vishay

- Trench FET® Gen IV power MOSFET - 100 % Rg and UIS tested - Qgd / Qgs ratio < 1 optimizes switching characteristics - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Synchronous rectification - High power density DC/DC - DC/AC inverters S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAK SO-8 Si RA58DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg LIMIT 40 +20,...