SiSS4402DN
SiSS4402DN is N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen IV power MOSFET
- Very low Qg and Qoss reduce power loss and improve efficiency
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Synchronous rectification
- Synchronous buck converter
- High power density DC/DC
- Load switching
N-Channel MOSFET S
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free Lead (Pb)-free and halogen-free, BLR and IOL
Power PAK 1212-8S Si SS4402DN-T1-GE3 Si SS4402DN-T1-UE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C TA = 25 °C
Pulsed drain current (t = 100 μs)
TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) c
IDM IS IAS...
