SiSS05DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) g Configuration 1 4 3 S 2 S S G Bottom View -30 0.0035 0.0058 37 -108 Single.
SiSS05DN Key Features
- TrenchFET® Gen IV p-channel power MOSFET
- Provides exceptionally low RDS(on) in a pact package that is thermally enhanced
- Enables higher power density
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance
SiSS05DN Applications
- Battery management in mobile devices