SiSS10DN Description
SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free).
SiSS10DN Key Features
- TrenchFET® Gen IV power MOSFET
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance