SiSS12DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 40 0.00198 0.00274 28.7 60 a, g Single.
SiSS12DN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS(on) in a pact and thermally enhanced package
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance