SiSS10ADN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 40 0.00265 0.00395 18.5 109 Single.
SiSS10ADN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low Qg and Qoss reduce power loss and improve efficiency
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance