SiSS06DN - N-Channel 30V MOSFET

Vishay

Key Features

TrenchFET® Gen IV power MOSFET.
Very low RDS(on) in a compact and thermally enhanced package.
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiSS06DN n-channel 30v mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiSS06DN
Manufacturer	Vishay
File Size	226.74 KB
Description	N-Channel 30V MOSFET
Datasheet	SiSS06DN Datasheet

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Other Datasheets by Vishay

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Full PDF Text Transcription (Reference)

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www.vishay.com SiSS06DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.00138 0.00203 24.6 172.6 a Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS(on) in a compact and thermally enhanced package • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.