SiSS06DN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.00138 0.00203 24.6 172.6 a Single.
SiSS06DN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS(on) in a pact and thermally enhanced package
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance