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TSML1040 Datasheet High Power Infrared Emitting Diode

Manufacturer: Vishay

Overview: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW TSML1000 TSML1020 TSML1030.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

TSML1000 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a clear, untinted plastic package (with lens) for surface mounting (SMD).

Key Features

  • Package type: surface-mount.
  • Package form: GW, RGW, yoke, axial.
  • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7.
  • Peak wavelength: λp = 940 nm.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 12°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Versatile terminal configurations.
  • Package matches with dete.

More Datasheets from Vishay

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TSML1000 High Power Infrared Emitting Diode
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TSML1030 High Power Infrared Emitting Diode
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TSML1040 Distributor