V10P45S-M3 rectifier equivalent, trench mos barrier schottky rectifier.
* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losse.
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECH.
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