V10P45S-M3 Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V10P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 45 V IFSM 180 A VF at IF = 10 A 0.41 V TJ max.

Datasheet Details

Part number	V10P45S-M3
Manufacturer	Vishay
File Size	94.79 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V10P45S-M3-Vishay.pdf

Key Features

Very low profile - typical height of 1.1 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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