* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V10P45S-M3 Datasheet (94.79 KB)
V10P45S-M3
94.79 KB
Trench mos barrier schottky rectifier.
www.vishay.com V10P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Lo.
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