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V10P45
Vishay General Semiconductor
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.34 V at IF = 5 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
45 V
IFSM
180 A
VF at IF = 10 A
0.
V10P45 Datasheet
