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V10P45S-M3
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.34 V at IF = 5 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
45 V
IFSM
180 A
VF at IF = 10 A
0.41 V
TJ max. Package Circuit configuration
150 °C SMPC (TO-277A)
Single
ADDITIONAL RESOURCES
3D 3D
3D Models
FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: for definitions of compliance
please see www.vishay.
V10P45S-M3 Datasheet
