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V10P45S-M3 - Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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V10P45S-M3 Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V10P45S-M3

Datasheet Details

Part number	V10P45S-M3
Manufacturer	Vishay
File Size	94.79 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V10P45S-M3 Datasheet
Additional preview pages of the V10P45S-M3 datasheet.

Product details

Features

Very low profile - typical height of 1.1 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Jun 8, 2020 |