* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V10PN50-M3 Datasheet (101.22 KB)
V10PN50-M3
101.22 KB
Trench mos barrier schottky rectifier.
www.vishay.com V10PN50-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF.
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