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V10PN50-M3 Datasheet Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number	V10PN50-M3
Manufacturer	Vishay
File Size	101.22 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V10PN50-M3 Datasheet

Overview

www.vishay.com V10PN50-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

Key Features

Very low profile - typical height of 1.1 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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