V10PN50-M3 Key Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Material categorization: for definitions of pliance
- Part: V10PN50-M3
- Manufacturer: Vishay (official site)
- Size: 101.22 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V10P10 | Trench MOS Barrier Schottky Rectifier |
| V10P12 | Trench MOS Barrier Schottky Rectifier |
| V10P15 | Trench MOS Barrier Schottky Rectifier |
| V10P20 | Trench MOS Barrier Schottky Rectifier |
| V10P45 | Trench MOS Barrier Schottky Rectifier |
V10PN50-M3 Description
V10PN50-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started.