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V12PM12-M3 Datasheet High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number V12PM12-M3
Manufacturer Vishay
File Size 93.07 KB
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V12PM12-M3 Datasheet

Overview

www.vishay.com V12PM12-M3, V12PM12HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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