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V15PN50-M3 Datasheet Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number V15PN50-M3
Manufacturer Vishay
File Size 101.73 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V15PN50-M3 Datasheet

Overview

www.vishay.com V15PN50-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.26 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.

Package 15 A 50 V 200 A 0.

Key Features

  • Very low profile - typical height of 1.1 mm.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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