Datasheet4U Logo Datasheet4U.com

V15P10 - Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

📥 Download Datasheet

Datasheet preview – V15P10

Datasheet Details

Part number V15P10
Manufacturer Vishay
File Size 100.37 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V15P10 Datasheet
Additional preview pages of the V15P10 datasheet.

📁 Similar Datasheet

  • V150CH8 - Metal-Oxide Varistors (Littelfuse)
  • V150K5 - (V150Kxx) METAL-OXIDE VARISTOR (Iskra Semic Capacitors)
  • V150Kxx - (V150Kxx) METAL-OXIDE VARISTOR (Iskra Semic Capacitors)
  • V150LA1 - UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
  • V150LA10A - UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
  • V150LA10AP - Metal-Oxide Varistors (Littelfuse)
  • V150LA10CP - Radial Leaded Varistors (Littelfuse)
  • V150LA1P - Metal-Oxide Varistors (Littelfuse)
  • V150LA2 - UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
  • V150LA20A - UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
Other Datasheets by Vishay
  • V15P12 - Trench MOS Barrier Schottky Rectifier
  • V15P15 - Trench MOS Barrier Schottky Rectifier
  • V15P45 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
  • V15P45-M3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
  • V15P45HM3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
  • V15P45S - SMD Photovoltaic Solar Cell Protection Schottky Rectifiers
  • V15P45S-M3 - SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers
  • V15P6 - Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V15P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.41 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
Published: |