V15P45HM3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay
Download the V15P45HM3 datasheet PDF.
This datasheet also covers the V15P45-M3 variant, as both devices belong to the same high current density surface mount trench mos barrier schottky rectifier family and are provided as variant models within a single manufacturer datasheet.
Key Features
Very low profile - typical height of 1.1 mm
Available.
Ideal for automated placement.
Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912
TYPIC.
Full PDF Text Transcription for V15P45HM3 (Reference)
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V15P45HM3. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com V15P45-M3, V15P45HM3 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 ...
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Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.
V15P45HM3 Datasheet
