Full PDF Text Transcription for V15P45S-M3 (Reference)
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V15P45S-M3. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com V15P45S-M3 Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers Ultra Low VF = 0.31 V at IF = 5 A TMB...
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MOS Barrier Schottky Rectifiers Ultra Low VF = 0.31 V at IF = 5 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 15 A 45 V 210 A 0.42 V 150 °C TO-277A (SMPC) Diode variation Single die FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.
V15P45S-M3 Datasheet
