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V15P45S-M3
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection Trench MOS Barrier Schottky Rectifiers
Ultra Low VF = 0.31 V at IF = 5 A
TMBS® eSMP® Series
K
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
15 A 45 V 210 A 0.42 V 150 °C TO-277A (SMPC)
Diode variation
Single die
FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C • Material categorization: For definitions of compliance
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V15P45S-M3 Datasheet
