V15W60C-M3 - Dual Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V15W60C-M3
Manufacturer	Vishay
File Size	118.74 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V15W60C-M3-Vishay.pdf

Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

📁 V15W60C-M3 Similar Datasheet

Other Datasheets by Vishay

V15WL45C-M3 - Dual Trench MOS Barrier Schottky Rectifier
V15P10 - Trench MOS Barrier Schottky Rectifier
V15P12 - Trench MOS Barrier Schottky Rectifier
V15P15 - Trench MOS Barrier Schottky Rectifier
V15P45 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V15P45-M3 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Published: Apr 8, 2016 |