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V20DL45BP
Vishay General Semiconductor
TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.31 V at IF = 5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 1 Anode 2
K Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
45 V
IFSM
160 A
VF at IF = 20 A (TA = 125 °C) TOP max. (AC model)
0.50 V 150 °C
TJ max.
V20DL45BP Datasheet
