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V20DL45-M3 - Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V20DL45-M3
Manufacturer Vishay
File Size 123.16 KB
Description Low-Voltage Trench MOS Barrier Schottky Rectifier
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Full PDF Text Transcription

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www.vishay.com V20DL45-M3, V20DL45HM3 Vishay General Semiconductor Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A TMBS® eSMP® Series TO-263AC (SMPD) K 1 2 Top View PIN 1 PIN 2 Bottom View K HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 160 A 0.
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