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V20DL45BP Datasheet Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Overview

www.vishay.com V20DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Anode 1 Anode 2 K Cathode DESIGN.

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