V20DM120CHM3 Features
* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
Datasheet Details
V20DM120CHM3, V20DM120C-M3
115.83 KB
Dual trench mos barrier schottky rectifier.
This datasheet PDF includes multiple part numbers: V20DM120CHM3, V20DM120C-M3.
Please refer to the document for exact specifications by model.
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V20DM120CHM3 Distributor
