V30100C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of pliance
- Part: V30100C
- Manufacturer: Vishay (official site)
- Size: 133.72 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V30100C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| V30100PW-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V30100S | High-Voltage Trench MOS Barrier Schottky Rectifier |
| V30100S-E3 | High Voltage Trench MOS Barrier Schottky Rectifier |
| V30100SG | High-Voltage Trench MOS Barrier Schottky Rectifier |
V30100C Description
.vishay. V30100C, VI30100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30100C 3 2 1 PIN 1 PIN 2 PIN.