Datasheet4U Logo Datasheet4U.com

V30100S Datasheet High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: .vishay. V30100S, VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30100S PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 100 V 250 A 0.

Datasheet Details

Part number V30100S
Manufacturer Vishay
File Size 139.30 KB
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V30100S_Vishay.pdf

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

More Datasheets from Vishay

Part Number Description
V30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V30100SG High-Voltage Trench MOS Barrier Schottky Rectifier
V30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V30100PW-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
V30120CI Dual High Voltage Trench MOS Barrier Schottky Rectifier
V30120S High-Voltage Trench MOS Barrier Schottky Rectifier
V30120SG High-Voltage Trench MOS Barrier Schottky Rectifier

V30100S Distributor