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V30100C Datasheet PDF

Vishay V30100C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Part No. V30100C
Datasheet V30100C Download
Manufacturer
Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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V30100C datasheet page 1 preview

FEATURES

● Trench MOS Schottky technology
● Low forward voltage drop, low power losses
● High efficiency operation
● Low thermal resistance
● Solder dip 275 °C max. 10 s, per JESD 22-B106
● Material categorization: for definitions of compliance please see

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 100 V 160 A VF at IF = 15 A 0.63 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode

MECHANICAL DATA

Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS

(TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig.
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