Datasheet4U Logo Datasheet4U.com

V30100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Datasheet Summary

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📥 Download Datasheet

Datasheet preview – V30100C

Datasheet Details

Part number V30100C
Manufacturer Vishay
File Size 133.72 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30100C Datasheet
Additional preview pages of the V30100C datasheet.

📁 Similar Datasheet

  • V30120S - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • V301HA32 - Varistor (Littelfuse)
  • V301HA40 - Varistor (Littelfuse)
  • V300A12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
  • V300B12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
  • V300C12xxxx - (V300x12xxxx) DC-DC Converter Module (Vicor Corporation)
  • V300LA10 - Line Voltage Operation/ Radial Lead (Littelfuse)
  • V300LA10 - UL Recognized Radial Lead Metal-Oxide Varistors (Harris)
  • V300LA10CP - Radial Leaded Varistors (Littelfuse)
  • V300LA10P - Metal-Oxide Varistors (Littelfuse)
Other Datasheets by Vishay
  • V30100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • V30100PW-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V30100S - High-Voltage Trench MOS Barrier Schottky Rectifier
  • V30100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
  • V30100SG - High-Voltage Trench MOS Barrier Schottky Rectifier
  • V30120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • V30120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • V30120CI - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription

Click to expand full text
www.vishay.com V30100C, VI30100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 100 V 160 A VF at IF = 15 A 0.
Published: |