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V30100S, VI30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
V30100S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
3 2 1
VI30100S
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
30 A 100 V 250 A 0.69 V 150 °C TO-220AB, TO-262AA
Diode variations
Single die
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance
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V30100S Datasheet
