* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified
* Meets MSL level 1, per J-STD-020, LF
V30DL50C-M3 Datasheet (122.69 KB)
V30DL50C-M3
122.69 KB
Dual trench mos barrier schottky rectifier.
www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A T.
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