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V30DL50CHM3 - Dual Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the V30DL50CHM3, a member of the V30DL50C-M3 Dual Trench MOS Barrier Schottky Rectifier family.

Product Overview

Vishay

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V30DL50CHM3 Dual Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V30DL50CHM3

Datasheet Details

Part number	V30DL50CHM3
Manufacturer	Vishay
File Size	122.69 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V30DL50CHM3 Datasheet
Additional preview pages of the V30DL50CHM3 datasheet.

V30DL50CHM3 Product details

Features

Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Apr 15, 2016 |