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V30DL50C-M3 - Dual Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V30DL50C-M3
Manufacturer Vishay
File Size 122.69 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V30DL50C-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.