V30DL50CHM3 Datasheet PDF (Dual Trench MOS Barrier Schottky Rectifier)

V30DL50CHM3 - Dual Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the V30DL50CHM3, a member of the V30DL50C-M3 Dual Trench MOS Barrier Schottky Rectifier family.

Features

Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
AEC-Q101 qualified.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	V30DL50CHM3
Manufacturer	Vishay
File Size	122.69 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V30DL50CHM3 Datasheet
Additional preview pages of the V30DL50CHM3 datasheet.

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Full PDF Text Transcription

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www.vishay.com V30DL50C-M3, V30DL50CHM3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.29 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V30DL50C PIN 1 K PIN 2 HEATSINK FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.

Published: Apr 15, 2016 |