V30M100M-E3 Overview
.vishay. V30M100M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of TO-220AB Diode variations mon cathode TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-220AB Molding pound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-pliant, mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD
V30M100M-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of
V30M100M-E3 Applications
- RoHS-pliant, mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD