900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

V30M100M-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
V30M100M-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.53 V at IF = 5 A
TMBS ®
TO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
V30M100M
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A (TA = 125 °C)
TJ max.
Package
2 x 15 A
100 V
120 A
0.70 V
175 °C
TO-220AB
Diode variations
Common cathode
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
V30M100M
100
30
15
120
10 000
-55 to +175
UNIT
V
A
A
V/μs
°C
Revision: 11-May-16
1 Document Number: 89986
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

V30M100M-E3 Datasheet

Dual High Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
V30M100M-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 5 ms
TYP.
0.59
0.66
0.85
0.53
0.59
0.70
3.0
1.0
-
3.0
MAX.
-
-
0.93
-
-
0.78
-
-
1000
16
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30M100M
Typical thermal resistance
per diode
per device
RJC
1.8
0.9
per device
RJA (1)(2)
40
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient dPD/dTJ < 1/RJA
(2) Free air, without heatsink
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30M100M-E3/4W
1.88
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
36
32 RthJA=RthJC=0.9oC/W
28
24
20
16
12
8 TA , RthJA=40oC/W
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
14
13
12
D = 0.8
D = 0.5
D = 0.3
11
10 D = 0.2
9 D = 0.1
D = 1.0
8
7
6
5T
4
3
2
D = tp/T
tp
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-May-16
2 Document Number: 89986
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number V30M100M-E3
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 4 Pages
PDF Download

V30M100M-E3 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 V30M100M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
Vishay





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy