V35DM120 Description
.vishay. V35DM120 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode LINKS TO ADDITIONAL RESOURCES 3D.
V35DM120 Key Features
- Trench MOS Schottky technology generation 2 Available
- Very low profile
- typical height of 1.7 mm
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance