V35PWM12 Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V35PWM12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.

Datasheet Details

Part number	V35PWM12
Manufacturer	Vishay
File Size	116.65 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V35PWM12-Vishay.pdf

Key Features

Very low profile - typical height of 1.3 mm.
Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 DESIGN.

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