V35PWM12 Description
V35PWM12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.42 V at IF = 5 A eSMP® Series 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK.
V35PWM12 Key Features
- Very low profile
- typical height of 1.3 mm
- Trench MOS Schottky technology
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance