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V35DM120 - Trench MOS Barrier Schottky Rectifier

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Vishay

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V35DM120 Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V35DM120

Datasheet Details

Part number	V35DM120
Manufacturer	Vishay
File Size	121.39 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V35DM120 Datasheet
Additional preview pages of the V35DM120 datasheet.

Product details

Features

Trench MOS Schottky technology generation 2 Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYP.

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Published: Jun 8, 2020 |