* Very low profile - typical height of 1.3 mm
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V35PWM12 Datasheet (116.65 KB)
V35PWM12
116.65 KB
Trench mos barrier schottky rectifier.
www.vishay.com V35PWM12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.
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