Vishay V35PWM12
Trench MOS Barrier Schottky Rectifier
| Part No. | V35PWM12 |
|---|---|
| Datasheet | V35PWM12 Download |
| Manufacturer |  Vishay |
| Description | Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Very low profile - typical height of 1.3 mm● Trench MOS Schottky technology
● Ideal for automated placement
● Low forward voltage drop, low power losses
● High efficiency operation
● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
● AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
● Material categorization: for definitions of compliance please see DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 35 A VRRM 120 V IFSM 260 A VF at IF = 35 A (TA = 125 °C) 0.68 V TJ max. 175 °C Package SlimDPAK (TO-252AE) Circuit configuration Single
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.MECHANICAL DATA
Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated le...
