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V40DM120C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Very low profile - typical height of 1.7 mm.
  • Ideal for automated placement.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V40DM120C-M3
Manufacturer Vishay
File Size 119.15 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V40DM120C-M3 Datasheet
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Full PDF Text Transcription

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www.vishay.com V40DM120C-M3, V40DM120CHM3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40DM120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 120 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 250 A 0.64 V 150 °C Package TO-263AC (SMPD) Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
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