* Very low profile - typical height of 1.3 mm
* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V40PW10C Datasheet (114.46 KB)
V40PW10C
114.46 KB
Trench mos barrier schottky rectifier.
www.vishay.com V40PW10C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.
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