V60D100CHM3 Datasheet PDF (Dual High-Voltage Trench MOS Barrier Schottky Rectifier)

V60D100CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Download the V60D100CHM3 datasheet PDF (V60D100C-M3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for dual high-voltage trench mos barrier schottky rectifier.

Features

Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Datasheet Details

Part number	V60D100CHM3
Manufacturer	Vishay
File Size	106.72 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60D100CHM3 Datasheet

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Full PDF Text Transcription

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www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V60D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM IFSM VF at IF = 30 A (TA = 125 °C) 100 V 320 A 0.66 V TJ max. 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.

Published: Mar 31, 2017 |