* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V60D100CHM3 Datasheet (106.72 KB)
V60D100CHM3
106.72 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V60D100C-M3, V60D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V a.
📁 Related Datasheet
V60D100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60D100C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60D120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V60D60C Trench MOS Barrier Schottky Rectifier (Vishay)
V60DM100C Trench MOS Barrier Schottky Rectifier (Vishay)
V60DM120C Trench MOS Barrier Schottky Rectifier (Vishay)
V60DM45C Trench MOS Barrier Schottky Rectifier (Vishay)
V60DM60C Trench MOS Barrier Schottky Rectifier (Vishay)
V600 RFID System Applications (Omron)
