V60D100C-M3
V60D100C-M3 is Dual High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
V60D100C-M3, V60D100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ® eSMP® Series TO-263AC (SMPD)
2 Top View
Bottom View
V60D100C
PIN 1
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM IFSM VF at IF = 30 A (TA = 125 °C)
100 V 320 A 0.66 V
TJ max.
150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual mon cathode
Features
- Trench MOS Schottky technology
- Very low profile
- typical height of 1.7 mm
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency...
