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V60D120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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V60D120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V60D120C

Datasheet Details

Part number	V60D120C
Manufacturer	Vishay
File Size	121.24 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60D120C Datasheet
Additional preview pages of the V60D120C datasheet.

Product details

Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

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Published: Apr 18, 2016 |