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V60D100CHM3

Manufacturer: Vishay

This datasheet includes multiple variants, all published together in a single manufacturer document.

V60D100CHM3 datasheet preview

Datasheet Details

Part number	V60D100CHM3
Datasheet	V60D100CHM3 V60D100C-M3 Datasheet (PDF)
File Size	106.72 KB
Manufacturer	Vishay
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V60D100CHM3 Overview

150 °C Package TO-263AC (SMPD) Diode variations Dual mon cathode.

V60D100CHM3 Key Features

Trench MOS Schottky technology
Very low profile
typical height of 1.7 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
AEC-Q101 qualified available:
Automotive ordering code: base P/NHM3
Material categorization: for definitions of pliance

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V60D100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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V60D45C	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
V60D60C	Trench MOS Barrier Schottky Rectifier
V60DM100C	Trench MOS Barrier Schottky Rectifier
V60DM120C	Trench MOS Barrier Schottky Rectifier
V60DM45C	Trench MOS Barrier Schottky Rectifier
V60DM60C	Trench MOS Barrier Schottky Rectifier
V60100C-M3	Dual High Voltage Trench MOS Barrier Schottky Rectifier

V60D100CHM3 Distributor