V6WM100C-M3 Description
V6WM100C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 3 A TMBS® TO-252 (D-PAK) K A A V6WM100C A K A HEATSINK.
V6WM100C-M3 Key Features
- Trench MOS Schottky technology
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020
- Material categorization: For definitions of pliance