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V8P12 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number V8P12
Manufacturer Vishay
File Size 101.97 KB
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V8P12 Datasheet

Overview

www.vishay.com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 PRIMA.

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