V8P20 Description
V8P20 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 4 A TMBS® eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 8.0 A TJ max. Package 8.0 A 200 V 150 A 0.68 V 150 °C SMPC (TO-277A) Circuit configuration...
V8P20 Key Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak
- Material categorization: for definitions of pliance
V8P20 Applications
- halogen-free, RoHS pliant, and mercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whi