VB10150S
VB10150S is High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
FEATURES
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
- Material categorization: For definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
A NC
NC K A HEATSINK
3 2 1
VI10150S
PIN 1
PIN 2
PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package
10 A 150 V 120 A 0.69 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation
Single die
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding pound meets UL 94 V-0 flammability rating Base P/N-E3
- Ro HS-pliant, mercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
VRRM IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 m H
Peak repetitive reverse current at tp = 2 μs, 1 k Hz, TJ = 38 °C ± 2...
