VB10170C-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
- Material categorization: for definitions of pliance
- Part: VB10170C-M3
- Manufacturer: Vishay (official site)
- Size: 88.29 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VB10170C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VB10170C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VB10170CHM3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VB10150S | High Voltage Trench MOS Barrier Schottky Rectifier |
VB10170C-M3 Description
VB10170C-E3, VB10170C-M3, VB10170CHM3 .vishay. Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 VB10170C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2x5A 170 V 80 A 0.65 V 175 °C TO-263AB Diode variations mon cathode.