VB10170C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum
- Material categorization: For definitions of pliance
- Part: VB10170C
- Manufacturer: Vishay (official site)
- Size: 85.96 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| VB10170C-E3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VB10170C-M3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
| VB10170CHM3 | Dual High Voltage Trench MOS Barrier Schottky Rectifier |
VB10170C Description
VB10170C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2.